Ion energy distributions at the electron cyclotron resonance position in electron cyclotron resonance plasma

Seiji Samukawa, Yukito Nakagawa, Kei Ikeda

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The extremely high selective phosphorus-doped polycrystalline silicon etching is achieved at the electron cyclotron resonance (ECR) position in a new developed ECR plasma etching system. To characterize these etching results, the ion energy distribution in an ECR plasma is measured. The mean ion energy and the width of ion energy distribution decrease as they near the ECR position. The ECR position in the ECR plasma has a high ion current density and low ion energy at the same time. These characteristics correspond to the etching results.

Original languageEnglish
Pages (from-to)2319-2321
Number of pages3
JournalJapanese journal of applied physics
Volume29
Issue number12
DOIs
Publication statusPublished - 1990 Dec
Externally publishedYes

Keywords

  • ECR plasma
  • ECR position
  • Ion current density
  • Ion energy distribution

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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