Ion current density and ion energy distributions at the electron cyclotron resonance position in the electron cyclotron resonance plasma

Seiji Samukawa, Yukito Nakagawa, Kei Ikeda

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Extremely highly selective phosphorus-doped polycrystalline silicon etching is achieved at the electron cyclotron resonance (ECR) position in a newly developed ECR plasma etching system. To characterize these etching results, the ion current density and the ion energy distribution in a ECR plasma are measured. Microwave power is absorbed completely at the ECR position. Therefore, the ECR position has maximum ion current density in an ECR plasma. Moreover, the mean ion energy and the width of ion energy distribution has minimum values at the ECR position. The ECR position in the ECR plasma can satisfy a high ion current density and a low ion energy at the same time. These characteristics correspond to the etching results.

Original languageEnglish
Pages (from-to)423-447
Number of pages25
JournalJapanese journal of applied physics
Volume30
Issue number2 R
DOIs
Publication statusPublished - 1991 Feb
Externally publishedYes

Keywords

  • ECR plasma
  • ECR position
  • Ion current density
  • Ion energy distribution

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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