TY - JOUR
T1 - Ion beam etching technology for high-density spin transfer torque magnetic random access memory
AU - Sugiura, Kuniaki
AU - Takahashi, Shigeki
AU - Amano, Minoru
AU - Kajiyama, Takeshi
AU - Iwayama, Masayoshi
AU - Asao, Yoshiaki
AU - Shimomura, Naoharu
AU - Kishi, Tatsuya
AU - Ikegawa, Sumio
AU - Yoda, Hiroaki
AU - Nitayama, Akihiro
PY - 2009/12/1
Y1 - 2009/12/1
N2 - A spin transfer torque magnetoresistive random access memory (STT-MRAM) is the most promising candidate for a non-volatile random access memory, because of its scalability, high-speed operation, and unlimited read/write endurance. An ion beam etching (IBE) is one of the promising etching methods for a magnetic tunnel junction (MTJ) of the STT-MRAM, because it has no after-corrosion and oxidation problems. In this work, we developed the multiple-step wafer-tilted IBE using computer calculation. Using optimized multiple-step IBE conditions, we fabricated MTJs without barrier-short defects.
AB - A spin transfer torque magnetoresistive random access memory (STT-MRAM) is the most promising candidate for a non-volatile random access memory, because of its scalability, high-speed operation, and unlimited read/write endurance. An ion beam etching (IBE) is one of the promising etching methods for a magnetic tunnel junction (MTJ) of the STT-MRAM, because it has no after-corrosion and oxidation problems. In this work, we developed the multiple-step wafer-tilted IBE using computer calculation. Using optimized multiple-step IBE conditions, we fabricated MTJs without barrier-short defects.
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U2 - 10.1143/JJAP.48.08HD02
DO - 10.1143/JJAP.48.08HD02
M3 - Article
AN - SCOPUS:77952683191
VL - 48
SP - 08HD021-08HD023
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8 Part 2
ER -