Ion beam etching technology for high-density spin transfer torque magnetic random access memory

Kuniaki Sugiura, Shigeki Takahashi, Minoru Amano, Takeshi Kajiyama, Masayoshi Iwayama, Yoshiaki Asao, Naoharu Shimomura, Tatsuya Kishi, Sumio Ikegawa, Hiroaki Yoda, Akihiro Nitayama

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26 Citations (Scopus)

Abstract

A spin transfer torque magnetoresistive random access memory (STT-MRAM) is the most promising candidate for a non-volatile random access memory, because of its scalability, high-speed operation, and unlimited read/write endurance. An ion beam etching (IBE) is one of the promising etching methods for a magnetic tunnel junction (MTJ) of the STT-MRAM, because it has no after-corrosion and oxidation problems. In this work, we developed the multiple-step wafer-tilted IBE using computer calculation. Using optimized multiple-step IBE conditions, we fabricated MTJs without barrier-short defects.

Original languageEnglish
Pages (from-to)08HD021-08HD023
JournalJapanese journal of applied physics
Volume48
Issue number8 Part 2
DOIs
Publication statusPublished - 2009 Dec 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Sugiura, K., Takahashi, S., Amano, M., Kajiyama, T., Iwayama, M., Asao, Y., Shimomura, N., Kishi, T., Ikegawa, S., Yoda, H., & Nitayama, A. (2009). Ion beam etching technology for high-density spin transfer torque magnetic random access memory. Japanese journal of applied physics, 48(8 Part 2), 08HD021-08HD023. https://doi.org/10.1143/JJAP.48.08HD02