Ion beam etching technology for high-density spin transfer torque magnetic random access memory

Kuniaki Sugiura; Shigeki Takahashi; Minoru Amano; Takeshi Kajiyama; Masayoshi Iwayama; Yoshiaki Asao; Naoharu Shimomura; Tatsuya Kishi; Sumio Ikegawa; Hiroaki Yoda; Akihiro Nitayama

doi:10.1143/JJAP.48.08HD02

Ion beam etching technology for high-density spin transfer torque magnetic random access memory

Kuniaki Sugiura, Shigeki Takahashi, Minoru Amano, Takeshi Kajiyama, Masayoshi Iwayama, Yoshiaki Asao, Naoharu Shimomura, Tatsuya Kishi, Sumio Ikegawa, Hiroaki Yoda, Akihiro Nitayama

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article

26 Citations (Scopus)

Abstract

A spin transfer torque magnetoresistive random access memory (STT-MRAM) is the most promising candidate for a non-volatile random access memory, because of its scalability, high-speed operation, and unlimited read/write endurance. An ion beam etching (IBE) is one of the promising etching methods for a magnetic tunnel junction (MTJ) of the STT-MRAM, because it has no after-corrosion and oxidation problems. In this work, we developed the multiple-step wafer-tilted IBE using computer calculation. Using optimized multiple-step IBE conditions, we fabricated MTJs without barrier-short defects.

Original language	English
Pages (from-to)	08HD021-08HD023
Journal	Japanese journal of applied physics
Volume	48
Issue number	8 Part 2
DOIs	https://doi.org/10.1143/JJAP.48.08HD02
Publication status	Published - 2009 Dec 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Sugiura, K., Takahashi, S., Amano, M., Kajiyama, T., Iwayama, M., Asao, Y., Shimomura, N., Kishi, T., Ikegawa, S., Yoda, H., & Nitayama, A. (2009). Ion beam etching technology for high-density spin transfer torque magnetic random access memory. Japanese journal of applied physics, 48(8 Part 2), 08HD021-08HD023. https://doi.org/10.1143/JJAP.48.08HD02

Ion beam etching technology for high-density spin transfer torque magnetic random access memory. / Sugiura, Kuniaki; Takahashi, Shigeki; Amano, Minoru; Kajiyama, Takeshi; Iwayama, Masayoshi; Asao, Yoshiaki; Shimomura, Naoharu; Kishi, Tatsuya; Ikegawa, Sumio; Yoda, Hiroaki; Nitayama, Akihiro.

In: Japanese journal of applied physics, Vol. 48, No. 8 Part 2, 01.12.2009, p. 08HD021-08HD023.

Research output: Contribution to journal › Article

Sugiura, Kuniaki ; Takahashi, Shigeki ; Amano, Minoru ; Kajiyama, Takeshi ; Iwayama, Masayoshi ; Asao, Yoshiaki ; Shimomura, Naoharu ; Kishi, Tatsuya ; Ikegawa, Sumio ; Yoda, Hiroaki ; Nitayama, Akihiro. / Ion beam etching technology for high-density spin transfer torque magnetic random access memory. In: Japanese journal of applied physics. 2009 ; Vol. 48, No. 8 Part 2. pp. 08HD021-08HD023.

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