Ion beam etching process for high-density spintronic devices and its damage recovery by the oxygen showering post-treatment process

Junho Jeong, Tetsuo Endoh

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The electric short fail trend of the perpendicular magnetic tunnel junctions (p-MTJs) caused by the ion beam etching (IBE) process is studied at various ion beam angles and cell-to-cell space widths. The number of electric short fails increases markedly at an ion beam angle greater than 35° and a cell-to-cell space width less than 30nm at the assumed MTJ height including a hard mask (HM) of 20 nm. In order to recover these electric short fails, we propose the selective oxidation process called the oxygen showering post-treatment (OSP). By the OSP process, the number of electric short fails in sub-30-nm-spaced MTJ arrays is reduced from 25 to 0.8%, and the magnetoresistance (MR) is increased from 99 to 120%. By this result, we can verify that the damaged layer is recovered successfully by the OSP, and that the OSP can be a universal post-treatment process even beyond the 20nm design rule for use in both reactive ion etching and IBE schemes.

Original languageEnglish
Article number04CE09
JournalJapanese journal of applied physics
Volume56
Issue number4
DOIs
Publication statusPublished - 2017 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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