Ion beam deposition of α-Ta films by nitrogen addition and improvement of diffusion barrier property

Joon Woo Bae, Jae Won Lim, Kouji Mimura, Minoru Isshiki

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Ta thin films were deposited on Si (100) substrates by an ion beam deposition method at various substrate bias voltages under Ar + N2 atmosphere with different pressure ratios of Ar and N2. The effects of nitrogen pressure in the plasma gas and the substrate bias voltage on the surface morphology, crystalline microstructure, electrical resistivity and diffusion barrier property were investigated. It was found that the fraction of a metastable β-phase in the Ta film deposited at the substrate bias voltage of - 50 V films decreased by adding nitrogen gas, while the α-Ta phase became dominant. As a result, the Ta films deposited at the substrate bias voltage of - 50 V under Ar (9 Pa) + N2 (3 Pa) atmosphere showed a dominant α-phase with good surface morphology, low resistivity, and superior thermal stability as a diffusion barrier.

Original languageEnglish
Pages (from-to)4768-4773
Number of pages6
JournalThin Solid Films
Volume515
Issue number11
DOIs
Publication statusPublished - 2007 Apr 9

Keywords

  • Diffusion barrier
  • Ion beam deposition
  • Resistivity
  • Ta film
  • α-phase

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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