Ion Beam Analysis of Molecular Beam Epitaxy InAIAs/InGaAs Layer Structures

D. V. Morgan, H. Ohno, C. E.C. Wood, L. F. Eastman, J. D. Berry

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

In this paper the Rutherford backscattering technique combined with channeling is used to study the stoichiometry and perfection of molecular beam epitaxial layers of InAlAs and InGaAs. Corroborative evidence from SIMS and Auger profiling are used to supplement the RBS studies.

Original languageEnglish
Pages (from-to)2419-2424
Number of pages6
JournalJournal of the Electrochemical Society
Volume128
Issue number11
DOIs
Publication statusPublished - 1981
Externally publishedYes

Keywords

  • MBE
  • RBS studies
  • channeling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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