In this paper the Rutherford backscattering technique combined with channeling is used to study the stoichiometry and perfection of molecular beam epitaxial layers of InAlAs and InGaAs. Corroborative evidence from SIMS and Auger profiling are used to supplement the RBS studies.
- RBS studies
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry