Ion beam analysis of helium and its irradiation effect on hydrogen trapping in W single crystals

S. Nagata; B. Tsuchiya; T. Sugawara; N. Ohtsu; T. Shikama

doi:10.1016/S0168-583X(01)01242-3

Ion beam analysis of helium and its irradiation effect on hydrogen trapping in W single crystals

S. Nagata, B. Tsuchiya, T. Sugawara, N. Ohtsu, T. Shikama

Materials Design Division

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Retention of He implanted into W single crystals and the He irradiation effects on H behavior were studied by ion beam analysis techniques. During implantation of ⁴He⁺ with 2-10 keV at 295 K, an accumulation of H started in the He implanted layer when the retained He concentration saturated. For the crystal irradiated by 10 keV He⁺ at 820 K, a remarkable increase of H was found in the He saturated layer, after stopping the implantation and cooling down the crystal below 400 K. Though blisters and exfoliation were observed for the surface irradiated at 820 K, less lattice disorder was found in the implanted layer and the thermal release of H occurred at lower temperature, in comparison with the crystal implanted at 295 K.

Original language	English
Pages (from-to)	652-656
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	190
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(01)01242-3
Publication status	Published - 2002 May 1

Keywords

Elastic recoil detection analysis
Helium
Hydrogen
Ion implantation
Tungsten

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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Ion beam analysis of helium and its irradiation effect on hydrogen trapping in W single crystals. / Nagata, S.; Tsuchiya, B.; Sugawara, T.; Ohtsu, N.; Shikama, T.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 190, No. 1-4, 01.05.2002, p. 652-656.

Research output: Contribution to journal › Article › peer-review

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abstract = "Retention of He implanted into W single crystals and the He irradiation effects on H behavior were studied by ion beam analysis techniques. During implantation of 4He+ with 2-10 keV at 295 K, an accumulation of H started in the He implanted layer when the retained He concentration saturated. For the crystal irradiated by 10 keV He+ at 820 K, a remarkable increase of H was found in the He saturated layer, after stopping the implantation and cooling down the crystal below 400 K. Though blisters and exfoliation were observed for the surface irradiated at 820 K, less lattice disorder was found in the implanted layer and the thermal release of H occurred at lower temperature, in comparison with the crystal implanted at 295 K.",

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AU - Tsuchiya, B.

AU - Sugawara, T.

AU - Ohtsu, N.

AU - Shikama, T.

PY - 2002/5/1

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N2 - Retention of He implanted into W single crystals and the He irradiation effects on H behavior were studied by ion beam analysis techniques. During implantation of 4He+ with 2-10 keV at 295 K, an accumulation of H started in the He implanted layer when the retained He concentration saturated. For the crystal irradiated by 10 keV He+ at 820 K, a remarkable increase of H was found in the He saturated layer, after stopping the implantation and cooling down the crystal below 400 K. Though blisters and exfoliation were observed for the surface irradiated at 820 K, less lattice disorder was found in the implanted layer and the thermal release of H occurred at lower temperature, in comparison with the crystal implanted at 295 K.

AB - Retention of He implanted into W single crystals and the He irradiation effects on H behavior were studied by ion beam analysis techniques. During implantation of 4He+ with 2-10 keV at 295 K, an accumulation of H started in the He implanted layer when the retained He concentration saturated. For the crystal irradiated by 10 keV He+ at 820 K, a remarkable increase of H was found in the He saturated layer, after stopping the implantation and cooling down the crystal below 400 K. Though blisters and exfoliation were observed for the surface irradiated at 820 K, less lattice disorder was found in the implanted layer and the thermal release of H occurred at lower temperature, in comparison with the crystal implanted at 295 K.

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