Abstract
We study the collective vibrational dynamics of epitaxial dislocation arrays in strained-layer structures grown beyond the critical thickness. Calculations are carried out in the frame of the isotropic elasticity theory enabling one to reveal the nature of dynamical correlations originating in the assembly of fluctuating dislocation lines. It is shown that due to shielding capabilities of image interactions the elastic response of a dislocation net can be described by means of an effective stiffness modulus. We find that the spectrum of collective excitations in the dislocation population exhibits sensitive dependence not only on the interface mismatch, but also varies with the epilayer thickness. The obtained results are used to determine the mean-square fluctuations in the dislocation ensemble and to characterize its entropy.
Original language | English |
---|---|
Pages (from-to) | 900-904 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 198-199 |
Issue number | pt 2 |
DOIs | |
Publication status | Published - 1999 Mar |
Externally published | Yes |
Event | Proceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10 - Jerusalem, Isr Duration: 1998 Jul 26 → 1998 Jul 31 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry