Invited: Room temperature bonding using thin metal films (bonding energy and technical potential)

T. Shimatsu, M. Uomoto, H. Kon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Citations (Scopus)

Abstract

Room temperature bonding using thin metal films uses two flat wafer surfaces with sputter deposition. Then two films on wafers are bonded in vacuum or in air. Bonding in vacuum can be accomplished using almost any metal film, even with film thickness of a few angstroms on each side. The bonding energy is greater than the surface energy of metal films at thicknesses greater than the critical film thickness, which is related to the formation of thin reactive layers between metal films and wafers. Bonding in air using Au films also shows a bonding energy greater than the surface energy of Au films, even with an exposure time of Au films to air of 168 h (1 week). Bonding of wafers and mirrorpolished metals was also achieved, which is effective for enhancing the heat dissipation efficiency.

Original languageEnglish
Title of host publicationSemiconductor Wafer Bonding 13
Subtitle of host publicationScience, Technology, and Applications
EditorsT. Suga, M. S. Goorsky, R. Knechtel, H. Moriceau, H. Baumgart, C. S. Tan, K. D. Hobart
PublisherElectrochemical Society Inc.
Pages317-328
Number of pages12
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2014 Jan 1
Event13th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2014 Oct 52014 Oct 9

Publication series

NameECS Transactions
Number5
Volume64
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other13th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications - 2014 ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period14/10/514/10/9

ASJC Scopus subject areas

  • Engineering(all)

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