Invited: High output power deep ultraviolet light-emitting diodes with hemispherical lenses fabricated using room-temperature bonding

M. Ichikawa, S. Endo, H. Sagawa, A. Fujioka, T. Kosugi, T. Mukai, M. Uomoto, T. Shimatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We reviewed the structural and optical properties of high output power 255 and 280 nm light-emitting diodes (LEDs) bonded with hemispherical lenses made of inorganic materials. The optimal LED structure with a lens to improve the output power for deep ultraviolet LEDs was designed using Monte Carlo simulation. The LED chips were bonded to sapphire lenses at room temperature using either atomic diffusion bonding or surface activated bonding. The bonding of the lenses to the LEDs is experimentally shown to improve the light extraction efficiency, and the light output power of the LEDs with lenses was significantly higher than that of conventional structure LEDs. The output power of a 255 nm LED with a lens was 2.8 times larger than that without a lens, with a maximum external quantum efficiency of 4.56%, and that of the 280 nm LED with a lens was larger by a factor of 2.3.

Original languageEnglish
Title of host publicationSemiconductor Wafer Bonding
Subtitle of host publicationScience, Technology and Applications 14
EditorsR. Knechtel, F. Fournel, K. D. Hobart, T. Suga, H. Baumgart, C. S. Tan, M. S. Goorsky
PublisherElectrochemical Society Inc.
Pages53-65
Number of pages13
Edition9
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016 Jan 1
EventSymposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Publication series

NameECS Transactions
Number9
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting
Country/TerritoryUnited States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • Engineering(all)

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