Investigations of thermocompression bonding with thin metal layers

J. Froemel, M. Baum, M. Wiemer, F. Roscher, M. Haubold, C. Jia, T. Gessner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

33 Citations (Scopus)

Abstract

In this study we successfully bonded silicon wafer substrates with metal based thermocompression technology. This technology has the advantage of inherent possibility of hermetic sealing and electrical contact. We used three different kinds of metals: gold, copper and aluminum. We will show the hermeticity, bonding strength and reliability of the different processes and compare the results.

Original languageEnglish
Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages990-993
Number of pages4
DOIs
Publication statusPublished - 2011
Event2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
Duration: 2011 Jun 52011 Jun 9

Publication series

Name2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Other

Other2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
CountryChina
CityBeijing
Period11/6/511/6/9

Keywords

  • Bonded interface
  • MEMS
  • Thinf films
  • Wafer bonding

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Investigations of thermocompression bonding with thin metal layers'. Together they form a unique fingerprint.

Cite this