Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals

Kanagasekaran Thangavel, P. Mythili, G. Bhagavannarayana, D. Kanjilal, R. Gopalakrishnan

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation.

Original languageEnglish
Pages (from-to)2495-2502
Number of pages8
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume267
Issue number15
DOIs
Publication statusPublished - 2009 Aug 1

Keywords

  • Electrical properties
  • Optical properties of clusters
  • Scanning electron microscopy
  • Single crystals

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Fingerprint Dive into the research topics of 'Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals'. Together they form a unique fingerprint.

Cite this