Investigations of all lead free IGBT module structure with low thermal resistance and high reliability

Y. Nishimura, A. Morozumi, E. Mochizuki, Y. Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents all lead free IGBT module structure with low thermal resistance and high reliability. Using thick copper foil alumina DCB, Sn/Ag/In solder, and copper base, we have achieved low thermal resistance as same as the current aluminum nitride (AlN) IGBT module structure. In addition to low thermal resistance, this new structure shows excellent temperature cycling capability of 3000 cycles.

Original languageEnglish
Title of host publicationProceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
Publication statusPublished - 2006 Dec 1
Externally publishedYes
Event18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06 - Naples, Italy
Duration: 2006 Jun 42006 Jun 8

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2006
ISSN (Print)1063-6854

Other

Other18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
CountryItaly
CityNaples
Period06/6/406/6/8

Keywords

  • High reliability
  • IGBT module stractuere lead free solder
  • Low thermal resistance

ASJC Scopus subject areas

  • Engineering(all)

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