Investigation of ZnO/sapphire interface and formation of ZnO nanocrystalline by laser MBE

I. Ohkubo; Y. Matsumoto; A. Ohtomo; T. Ohnishi; A. Tsukazaki; M. Lippmaa; H. Koinuma; M. Kawasaki

doi:10.1016/S0169-4332(00)00138-0

Investigation of ZnO/sapphire interface and formation of ZnO nanocrystalline by laser MBE

I. Ohkubo, Y. Matsumoto, A. Ohtomo, T. Ohnishi, A. Tsukazaki, M. Lippmaa, H. Koinuma, M. Kawasaki

Research output: Contribution to journal › Conference article

54 Citations (Scopus)

Abstract

Epitaxial ZnO thin films were prepared on atomically flat sapphire (α-Al203) (0001) substrates at various substrate temperatures by laser molecular beam epitaxy. Crystal structure was analyzed by four-circle X-ray diffraction. Atomic force microscope (AFM) and reflection high energy electron diffraction (RHEED) were used to evaluate surface morphology. When ZnO was deposited on atomically flat sapphire (0001), an epitaxial ZnO film was grown with c-axis orientation, having two different in-plane orientation, ZnO [101̄0] ∥ sapphire [101̄0] (400-450 °C) and ZnO [101̄0] ∥ sapphire [112̄0] (800-835 °C), depending on deposition temperature. The detailed observation of the initial growth of ZnO film deposited at 835 °C revealed that the growth mode followed Stranski-Krastanov growth mechanism.

Original language	English
Pages (from-to)	514-519
Number of pages	6
Journal	Applied Surface Science
Volume	159
DOIs	https://doi.org/10.1016/S0169-4332(00)00138-0
Publication status	Published - 2000 Jun
Externally published	Yes
Event	3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn Duration: 1999 Oct 25 → 1999 Oct 29

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Ohkubo, I., Matsumoto, Y., Ohtomo, A., Ohnishi, T., Tsukazaki, A., Lippmaa, M., Koinuma, H., & Kawasaki, M. (2000). Investigation of ZnO/sapphire interface and formation of ZnO nanocrystalline by laser MBE. Applied Surface Science, 159, 514-519. https://doi.org/10.1016/S0169-4332(00)00138-0

@article{2c0271a0397849609e6c61475ae2230c,

title = "Investigation of ZnO/sapphire interface and formation of ZnO nanocrystalline by laser MBE",

abstract = "Epitaxial ZnO thin films were prepared on atomically flat sapphire (α-Al203) (0001) substrates at various substrate temperatures by laser molecular beam epitaxy. Crystal structure was analyzed by four-circle X-ray diffraction. Atomic force microscope (AFM) and reflection high energy electron diffraction (RHEED) were used to evaluate surface morphology. When ZnO was deposited on atomically flat sapphire (0001), an epitaxial ZnO film was grown with c-axis orientation, having two different in-plane orientation, ZnO [10{\=1}0] ∥ sapphire [10{\=1}0] (400-450 °C) and ZnO [10{\=1}0] ∥ sapphire [11{\=2}0] (800-835 °C), depending on deposition temperature. The detailed observation of the initial growth of ZnO film deposited at 835 °C revealed that the growth mode followed Stranski-Krastanov growth mechanism.",

author = "I. Ohkubo and Y. Matsumoto and A. Ohtomo and T. Ohnishi and A. Tsukazaki and M. Lippmaa and H. Koinuma and M. Kawasaki",

year = "2000",

month = jun,

doi = "10.1016/S0169-4332(00)00138-0",

language = "English",

volume = "159",

pages = "514--519",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

note = "3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) ; Conference date: 25-10-1999 Through 29-10-1999",

}

TY - JOUR

T1 - Investigation of ZnO/sapphire interface and formation of ZnO nanocrystalline by laser MBE

AU - Ohkubo, I.

AU - Matsumoto, Y.

AU - Ohtomo, A.

AU - Ohnishi, T.

AU - Tsukazaki, A.

AU - Lippmaa, M.

AU - Koinuma, H.

AU - Kawasaki, M.

PY - 2000/6

Y1 - 2000/6

N2 - Epitaxial ZnO thin films were prepared on atomically flat sapphire (α-Al203) (0001) substrates at various substrate temperatures by laser molecular beam epitaxy. Crystal structure was analyzed by four-circle X-ray diffraction. Atomic force microscope (AFM) and reflection high energy electron diffraction (RHEED) were used to evaluate surface morphology. When ZnO was deposited on atomically flat sapphire (0001), an epitaxial ZnO film was grown with c-axis orientation, having two different in-plane orientation, ZnO [101̄0] ∥ sapphire [101̄0] (400-450 °C) and ZnO [101̄0] ∥ sapphire [112̄0] (800-835 °C), depending on deposition temperature. The detailed observation of the initial growth of ZnO film deposited at 835 °C revealed that the growth mode followed Stranski-Krastanov growth mechanism.

AB - Epitaxial ZnO thin films were prepared on atomically flat sapphire (α-Al203) (0001) substrates at various substrate temperatures by laser molecular beam epitaxy. Crystal structure was analyzed by four-circle X-ray diffraction. Atomic force microscope (AFM) and reflection high energy electron diffraction (RHEED) were used to evaluate surface morphology. When ZnO was deposited on atomically flat sapphire (0001), an epitaxial ZnO film was grown with c-axis orientation, having two different in-plane orientation, ZnO [101̄0] ∥ sapphire [101̄0] (400-450 °C) and ZnO [101̄0] ∥ sapphire [112̄0] (800-835 °C), depending on deposition temperature. The detailed observation of the initial growth of ZnO film deposited at 835 °C revealed that the growth mode followed Stranski-Krastanov growth mechanism.

UR - http://www.scopus.com/inward/record.url?scp=0034205144&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034205144&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(00)00138-0

DO - 10.1016/S0169-4332(00)00138-0

M3 - Conference article

AN - SCOPUS:0034205144

VL - 159

SP - 514

EP - 519

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

T2 - 3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3)

Y2 - 25 October 1999 through 29 October 1999

ER -