TY - JOUR
T1 - Investigation of ZnO/sapphire interface and formation of ZnO nanocrystalline by laser MBE
AU - Ohkubo, I.
AU - Matsumoto, Y.
AU - Ohtomo, A.
AU - Ohnishi, T.
AU - Tsukazaki, A.
AU - Lippmaa, M.
AU - Koinuma, H.
AU - Kawasaki, M.
N1 - Funding Information:
This work was partly supported by JSPS Research for Future Program in the Area of Atomic-scale Surface and Interface Dynamics (RTFT96P00205). A.O. and T.O. are supported by JSPS Research Fellowships for Young Scientists.
PY - 2000/6
Y1 - 2000/6
N2 - Epitaxial ZnO thin films were prepared on atomically flat sapphire (α-Al203) (0001) substrates at various substrate temperatures by laser molecular beam epitaxy. Crystal structure was analyzed by four-circle X-ray diffraction. Atomic force microscope (AFM) and reflection high energy electron diffraction (RHEED) were used to evaluate surface morphology. When ZnO was deposited on atomically flat sapphire (0001), an epitaxial ZnO film was grown with c-axis orientation, having two different in-plane orientation, ZnO [101̄0] ∥ sapphire [101̄0] (400-450 °C) and ZnO [101̄0] ∥ sapphire [112̄0] (800-835 °C), depending on deposition temperature. The detailed observation of the initial growth of ZnO film deposited at 835 °C revealed that the growth mode followed Stranski-Krastanov growth mechanism.
AB - Epitaxial ZnO thin films were prepared on atomically flat sapphire (α-Al203) (0001) substrates at various substrate temperatures by laser molecular beam epitaxy. Crystal structure was analyzed by four-circle X-ray diffraction. Atomic force microscope (AFM) and reflection high energy electron diffraction (RHEED) were used to evaluate surface morphology. When ZnO was deposited on atomically flat sapphire (0001), an epitaxial ZnO film was grown with c-axis orientation, having two different in-plane orientation, ZnO [101̄0] ∥ sapphire [101̄0] (400-450 °C) and ZnO [101̄0] ∥ sapphire [112̄0] (800-835 °C), depending on deposition temperature. The detailed observation of the initial growth of ZnO film deposited at 835 °C revealed that the growth mode followed Stranski-Krastanov growth mechanism.
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U2 - 10.1016/S0169-4332(00)00138-0
DO - 10.1016/S0169-4332(00)00138-0
M3 - Conference article
AN - SCOPUS:0034205144
SN - 0169-4332
VL - 159
SP - 514
EP - 519
JO - Applied Surface Science
JF - Applied Surface Science
T2 - 3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3)
Y2 - 25 October 1999 through 29 October 1999
ER -