Abstract
Epitaxial ZnO thin films were prepared on atomically flat sapphire (α-Al203) (0001) substrates at various substrate temperatures by laser molecular beam epitaxy. Crystal structure was analyzed by four-circle X-ray diffraction. Atomic force microscope (AFM) and reflection high energy electron diffraction (RHEED) were used to evaluate surface morphology. When ZnO was deposited on atomically flat sapphire (0001), an epitaxial ZnO film was grown with c-axis orientation, having two different in-plane orientation, ZnO [101̄0] ∥ sapphire [101̄0] (400-450 °C) and ZnO [101̄0] ∥ sapphire [112̄0] (800-835 °C), depending on deposition temperature. The detailed observation of the initial growth of ZnO film deposited at 835 °C revealed that the growth mode followed Stranski-Krastanov growth mechanism.
Original language | English |
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Pages (from-to) | 514-519 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 159 |
DOIs | |
Publication status | Published - 2000 Jun |
Externally published | Yes |
Event | 3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn Duration: 1999 Oct 25 → 1999 Oct 29 |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films