Investigation of ZnO/sapphire interface and formation of ZnO nanocrystalline by laser MBE

I. Ohkubo, Y. Matsumoto, A. Ohtomo, T. Ohnishi, A. Tsukazaki, M. Lippmaa, H. Koinuma, M. Kawasaki

Research output: Contribution to journalConference article

54 Citations (Scopus)

Abstract

Epitaxial ZnO thin films were prepared on atomically flat sapphire (α-Al203) (0001) substrates at various substrate temperatures by laser molecular beam epitaxy. Crystal structure was analyzed by four-circle X-ray diffraction. Atomic force microscope (AFM) and reflection high energy electron diffraction (RHEED) were used to evaluate surface morphology. When ZnO was deposited on atomically flat sapphire (0001), an epitaxial ZnO film was grown with c-axis orientation, having two different in-plane orientation, ZnO [101̄0] ∥ sapphire [101̄0] (400-450 °C) and ZnO [101̄0] ∥ sapphire [112̄0] (800-835 °C), depending on deposition temperature. The detailed observation of the initial growth of ZnO film deposited at 835 °C revealed that the growth mode followed Stranski-Krastanov growth mechanism.

Original languageEnglish
Pages (from-to)514-519
Number of pages6
JournalApplied Surface Science
Volume159
DOIs
Publication statusPublished - 2000 Jun
Externally publishedYes
Event3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
Duration: 1999 Oct 251999 Oct 29

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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