Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions

M. Belmoubarik, T. Nozaki, H. Endo, M. Sahashi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Deposition of ZnO thin films on a ferromagnetic metallic buffer layer (Co3Pt) by molecular beam epitaxy technique was investigated for realization of ZnO-based magnetic tunneling junctions with good quality hexagonal ZnO films as tunnel barriers. For substrate temperature of 600 °C, ZnO films exhibited low oxygen defects and high electrical resistivity of 130 Ω cm. This value exceeded that of hexagonal ZnO films grown by sputtering technique, which are used as tunnel barriers in ZnO-MTJs. Also, the effect of oxygen flow during deposition on epitaxial growth conditions and Co 3Pt surface oxidation was discussed.

Original languageEnglish
Article number17C106
JournalJournal of Applied Physics
Volume113
Issue number17
DOIs
Publication statusPublished - 2013 May 7

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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