Investigation of thin-film Ni/single-crystal SiC interface reaction

I. Ohdomari, S. Sha, H. Aochi, T. Chikyow, S. Suzuki

Research output: Contribution to journalArticlepeer-review

50 Citations (Scopus)

Abstract

Interface reaction between Ni thin film and bulk SiC during heat treatment was investigated by MeV ion backscattering spectrometry using resonance scattering of helium-carbon, x-ray diffraction, and Auger electron spectroscopy (AES). Polycrystalline nickel-silicide, Ni2Si, was formed by heat treatment at 600 °C in forming gas. Carbon compounds were not detected in the reaction products. Carbon was distributed uniformly with a concentration of about 25 at. % in the reacted film, and the C KLL line shape of AES in the reaction products as similar to that of elementary carbon.

Original languageEnglish
Pages (from-to)3747-3750
Number of pages4
JournalJournal of Applied Physics
Volume62
Issue number9
DOIs
Publication statusPublished - 1987 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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