Investigation of thin-film Ni/single-crystal SiC interface reaction

I. Ohdomari; S. Sha; H. Aochi; T. Chikyow; S. Suzuki

doi:10.1063/1.339259

Investigation of thin-film Ni/single-crystal SiC interface reaction

I. Ohdomari, S. Sha, H. Aochi, T. Chikyow, S. Suzuki

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

Interface reaction between Ni thin film and bulk SiC during heat treatment was investigated by MeV ion backscattering spectrometry using resonance scattering of helium-carbon, x-ray diffraction, and Auger electron spectroscopy (AES). Polycrystalline nickel-silicide, Ni₂Si, was formed by heat treatment at 600 °C in forming gas. Carbon compounds were not detected in the reaction products. Carbon was distributed uniformly with a concentration of about 25 at. % in the reacted film, and the C KLL line shape of AES in the reaction products as similar to that of elementary carbon.

Original language	English
Pages (from-to)	3747-3750
Number of pages	4
Journal	Journal of Applied Physics
Volume	62
Issue number	9
DOIs	https://doi.org/10.1063/1.339259
Publication status	Published - 1987 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.339259

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abstract = "Interface reaction between Ni thin film and bulk SiC during heat treatment was investigated by MeV ion backscattering spectrometry using resonance scattering of helium-carbon, x-ray diffraction, and Auger electron spectroscopy (AES). Polycrystalline nickel-silicide, Ni2Si, was formed by heat treatment at 600 °C in forming gas. Carbon compounds were not detected in the reaction products. Carbon was distributed uniformly with a concentration of about 25 at. % in the reacted film, and the C KLL line shape of AES in the reaction products as similar to that of elementary carbon.",

author = "I. Ohdomari and S. Sha and H. Aochi and T. Chikyow and S. Suzuki",

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AU - Ohdomari, I.

AU - Sha, S.

AU - Aochi, H.

AU - Chikyow, T.

AU - Suzuki, S.

PY - 1987/12/1

Y1 - 1987/12/1

N2 - Interface reaction between Ni thin film and bulk SiC during heat treatment was investigated by MeV ion backscattering spectrometry using resonance scattering of helium-carbon, x-ray diffraction, and Auger electron spectroscopy (AES). Polycrystalline nickel-silicide, Ni2Si, was formed by heat treatment at 600 °C in forming gas. Carbon compounds were not detected in the reaction products. Carbon was distributed uniformly with a concentration of about 25 at. % in the reacted film, and the C KLL line shape of AES in the reaction products as similar to that of elementary carbon.

AB - Interface reaction between Ni thin film and bulk SiC during heat treatment was investigated by MeV ion backscattering spectrometry using resonance scattering of helium-carbon, x-ray diffraction, and Auger electron spectroscopy (AES). Polycrystalline nickel-silicide, Ni2Si, was formed by heat treatment at 600 °C in forming gas. Carbon compounds were not detected in the reaction products. Carbon was distributed uniformly with a concentration of about 25 at. % in the reacted film, and the C KLL line shape of AES in the reaction products as similar to that of elementary carbon.

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Investigation of thin-film Ni/single-crystal SiC interface reaction

Abstract

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