Abstract
Interface reaction between Ni thin film and bulk SiC during heat treatment was investigated by MeV ion backscattering spectrometry using resonance scattering of helium-carbon, x-ray diffraction, and Auger electron spectroscopy (AES). Polycrystalline nickel-silicide, Ni2Si, was formed by heat treatment at 600 °C in forming gas. Carbon compounds were not detected in the reaction products. Carbon was distributed uniformly with a concentration of about 25 at. % in the reacted film, and the C KLL line shape of AES in the reaction products as similar to that of elementary carbon.
Original language | English |
---|---|
Pages (from-to) | 3747-3750 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 62 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1987 Dec 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)