Investigation of thermal stability of TiN film formed by atomic layer deposition using tetrakis(dimethylamino)titanium precursor for metal-gate metal-oxide-semiconductor field-effect transistor

Tetsuro Hayashida, Kazuhiko Endo, Yongxun Liu, Takahiro Kamei, Takashi Matsukawa, Shin Ichi O'uchi, Kunihiro Sakamoto, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Meishoku Masahara

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this paper, we describe the superiority of the titanium nitride (TiN) film formed by atomic layer deposition (ALD) using a tetrakis(dimethylamino) titanium (TDMAT) precursor for metal-gate electrodes of planar metal-oxide-semiconductor field-effect transistors (MOSFETs). It was demonstrated that the resistivity of the ALD TiN was significantly reduced by NH3 post deposition annealing (PDA). The electrical characteristics of the ALD-TiN-gate MOS capacitors and planar MOSFETs were evaluated and compared with those of the physical-vapor-deposited (PVD) TiN. The performance of the ALD-TiN-gate cases was confirmed to be superior to that of the PVD-TiN-gate cases, which was explained by the lower interface trap density (Dit) of the ALD TiN/SiO2 gate stack.

Original languageEnglish
Article number04DA16
JournalJapanese journal of applied physics
Volume49
Issue number4 PART 2
DOIs
Publication statusPublished - 2010 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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