Investigation of the surfactant effect of Sn in ZnSe by reflectance difference spectroscopy and reflection high-energy electron diffraction

H. D. Jung, N. Kumagai, T. Hanada, E. Kurtz, Z. Zhu, T. Yao

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We have studied the surfactant effect of Sn on ZnSe(0 0 1) growth by molecular beam epitaxy equipped with in-situ reflection high-energy electron diffraction and reflectance difference spectroscopy and in-line Auger electron spectroscopy. Sn deposited on the Zn stabilized c(2 ×2) ZnSe surface showed surface segregation, while Sn deposited on the Se-stabilized (2×1) surface does not segregate to the growing surface. We have demonstrated that Sn deposited on the Zn stabilized ZnSe surface improve two-dimensional growth in highly strained CdSe/ZnSe system.

Original languageEnglish
Pages (from-to)223-227
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
DOIs
Publication statusPublished - 1998

Keywords

  • MBE
  • Quantum structure
  • RDS
  • RHEED
  • Surfactant
  • ZnSe

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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