Investigation of the interstitial site in as+-ion-implanted gaas by means of a multidirectional and high-depth resolution rbs /channelling technique

Jun Ichi Nishizawa1, Ikuo Shiota1, Yutaka Oyama2

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18 Citations (Scopus)


The double-yield peak and the site exchange of the responsible interstitial atoms on annealing have been observed for the first time in a low-dose As--ion-implanted GaAs crystal by means of a high-depth resolution and multidirectional Rutherford back-scattering (RBs)/channelling technique. The newly observed second peak is located deeper than the conventional first peak around the projected range Rp. After annealing at 200-250 °C, it is found that the interstitial atoms responsible for both peaks change their sites during aging at a low temperature (rt ˜ 40 °C) and occupy a more stable bond-centred interstitial site for the first peak and a mixed site of the bond-centred and a split (100) one for the second peak. It is concluded that a split (100) site may be one of the most stable sites in the GaAs even at a higher temperature.

Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalJournal of Physics C: Solid State Physics
Issue number1
Publication statusPublished - 1986 Jan 10
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Engineering(all)
  • Physics and Astronomy(all)

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