TY - JOUR
T1 - Investigation of the interstitial site in as+-ion-implanted gaas by means of a multidirectional and high-depth resolution rbs /channelling technique
AU - Nishizawa1, Jun Ichi
AU - Shiota1, Ikuo
AU - Oyama2, Yutaka
PY - 1986/1/10
Y1 - 1986/1/10
N2 - The double-yield peak and the site exchange of the responsible interstitial atoms on annealing have been observed for the first time in a low-dose As--ion-implanted GaAs crystal by means of a high-depth resolution and multidirectional Rutherford back-scattering (RBs)/channelling technique. The newly observed second peak is located deeper than the conventional first peak around the projected range Rp. After annealing at 200-250 °C, it is found that the interstitial atoms responsible for both peaks change their sites during aging at a low temperature (rt ˜ 40 °C) and occupy a more stable bond-centred interstitial site for the first peak and a mixed site of the bond-centred and a split (100) one for the second peak. It is concluded that a split (100) site may be one of the most stable sites in the GaAs even at a higher temperature.
AB - The double-yield peak and the site exchange of the responsible interstitial atoms on annealing have been observed for the first time in a low-dose As--ion-implanted GaAs crystal by means of a high-depth resolution and multidirectional Rutherford back-scattering (RBs)/channelling technique. The newly observed second peak is located deeper than the conventional first peak around the projected range Rp. After annealing at 200-250 °C, it is found that the interstitial atoms responsible for both peaks change their sites during aging at a low temperature (rt ˜ 40 °C) and occupy a more stable bond-centred interstitial site for the first peak and a mixed site of the bond-centred and a split (100) one for the second peak. It is concluded that a split (100) site may be one of the most stable sites in the GaAs even at a higher temperature.
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U2 - 10.1088/0022-3719/19/1/006
DO - 10.1088/0022-3719/19/1/006
M3 - Article
AN - SCOPUS:0442274778
VL - 19
SP - 1
EP - 7
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 1
ER -