Investigation of the Impact of External Stress on Memory Characteristics by Modifying the Backside of Substrate

Young Taek Oh, Jae Min Sim, Nguyen Van Toan, Hisashi Kino, Takahito Ono, Tetsu Tanaka, Yun Heub Song

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of the external stress on memory device characteristics are numerically discussed, and experimental observations are made, based on the wafer curvature method for extraction of stress. An analysis of the interface state is then performed. The external force applied to the device was controlled by depositing a metal film on the wafer backside; then, the residual stress induced on the substrate was extracted. We observed that the dangling bond generated by the residual stress increases the trap site and deteriorates the interface properties. A resulting degradation of cell characteristics occurred, including an increase in the leakage current and degradation of the memory window, featuring a reduction in the oxide/nitride/oxide trap density, which worsens as the magnitude of stress increases. From these results, we concluded that minimizing the stress is essential for retaining the cell characteristics. Especially, our results are expected to be of great help in determining the effect of external force on the memory characteristics during the back-end-of-line processing.

Original languageEnglish
Article number8660701
Pages (from-to)1741-1746
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume66
Issue number4
DOIs
Publication statusPublished - 2019 Apr

Keywords

  • Curvature method
  • external stress
  • interface trap densities
  • mechanical stress
  • metal-oxide-nitride-oxide-semiconductor (MONOS) structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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