Reflection high-energy electron diffraction (RHEED) of Si surface was observed by using the imaging plate. The streaky diffraction spots and weak Kikuchi patterns of Si(100) surface were clearly recorded owing to the wide dynamic range of the imaging plate. Furthermore, the change of the RHEED patterns due to the oxidation of Si surface was clarified in detail from their intensity profiles. It was shown that RHEED with the imaging plate was promising to the quantitative analysis of Si surface.
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