Investigation of Si dendrites by electron-beam-induced current

Wei Yi; Jun Chen; Shun Ito; Koji Nakazato; Takashi Kimura; Takashi Sekiguchi; Kozo Fujiwara

doi:10.3390/cryst8080317

Investigation of Si dendrites by electron-beam-induced current

Wei Yi, Jun Chen, Shun Ito, Koji Nakazato, Takashi Kimura, Takashi Sekiguchi, Kozo Fujiwara

Collaborative Research Center on Energy Materials

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This paper reports on electron-beam-induced current (EBIC) characterization of special multicrystalline Si ingot by dendritic growth under high undercooling. Grain boundaries (GBs), dislocations, and their interaction with carbon related precipitates were investigated. The difference between grains from dendrite and non-dendrite growth was compared. In dendrite grains, parallel twins were frequently found. In non-dendrite grains, irregular GBs of various characters co-existed. Both parallel twins and irregular GBs exhibited dark EBIC contrast at room temperature, indicating the presence of minority carrier recombination centers due to impurity contamination. However, sometimes in non-dendrite grains GBs were visualized with bright EBIC contrast with enhanced collection of charge carriers. The origin of the abnormal bright EBIC contrast was explored and it turned out to be SiC related precipitates, which made GBs conduction channels for electron transport.

Original language	English
Article number	317
Journal	Crystals
Volume	8
Issue number	8
DOIs	https://doi.org/10.3390/cryst8080317
Publication status	Published - 2018 Aug

Keywords

Dendrite
EBIC
Grain boundaries
mc-Si

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Condensed Matter Physics
Inorganic Chemistry

Access to Document

10.3390/cryst8080317

Fingerprint Dive into the research topics of 'Investigation of Si dendrites by electron-beam-induced current'. Together they form a unique fingerprint.

Cite this

@article{a46e1265aebf4bacaabbbb9d3257056e,

title = "Investigation of Si dendrites by electron-beam-induced current",

abstract = "This paper reports on electron-beam-induced current (EBIC) characterization of special multicrystalline Si ingot by dendritic growth under high undercooling. Grain boundaries (GBs), dislocations, and their interaction with carbon related precipitates were investigated. The difference between grains from dendrite and non-dendrite growth was compared. In dendrite grains, parallel twins were frequently found. In non-dendrite grains, irregular GBs of various characters co-existed. Both parallel twins and irregular GBs exhibited dark EBIC contrast at room temperature, indicating the presence of minority carrier recombination centers due to impurity contamination. However, sometimes in non-dendrite grains GBs were visualized with bright EBIC contrast with enhanced collection of charge carriers. The origin of the abnormal bright EBIC contrast was explored and it turned out to be SiC related precipitates, which made GBs conduction channels for electron transport.",

keywords = "Dendrite, EBIC, Grain boundaries, mc-Si",

author = "Wei Yi and Jun Chen and Shun Ito and Koji Nakazato and Takashi Kimura and Takashi Sekiguchi and Kozo Fujiwara",

note = "Funding Information: Acknowledgments: This work was supported by International Center for Materials Nanoarchitectonics (MANA). We are grateful to H. Iwai, M. Nishio and H. Yasufuku in Materials Analysis Station of NIMS, for their great technique support. This work was partly done under the interuniversity cooperative research program of the Institute for Materials Research, Tohoku University. Funding Information: This research received no external funding. Acknowledgments: This work was supported by International Center for Materials Nanoarchitectonics (MANA). We are grateful to H. Iwai, M. Nishio and H. Yasufuku in Materials Analysis Station of NIMS, for their great technique support. This work was partly done under the interuniversity cooperative research program of the Institute for Materials Research, Tohoku University.",

year = "2018",

month = aug,

doi = "10.3390/cryst8080317",

language = "English",

volume = "8",

journal = "Crystals",

issn = "2073-4352",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "8",

}

TY - JOUR

T1 - Investigation of Si dendrites by electron-beam-induced current

AU - Yi, Wei

AU - Chen, Jun

AU - Ito, Shun

AU - Nakazato, Koji

AU - Kimura, Takashi

AU - Sekiguchi, Takashi

AU - Fujiwara, Kozo

N1 - Funding Information: Acknowledgments: This work was supported by International Center for Materials Nanoarchitectonics (MANA). We are grateful to H. Iwai, M. Nishio and H. Yasufuku in Materials Analysis Station of NIMS, for their great technique support. This work was partly done under the interuniversity cooperative research program of the Institute for Materials Research, Tohoku University. Funding Information: This research received no external funding. Acknowledgments: This work was supported by International Center for Materials Nanoarchitectonics (MANA). We are grateful to H. Iwai, M. Nishio and H. Yasufuku in Materials Analysis Station of NIMS, for their great technique support. This work was partly done under the interuniversity cooperative research program of the Institute for Materials Research, Tohoku University.

PY - 2018/8

Y1 - 2018/8

N2 - This paper reports on electron-beam-induced current (EBIC) characterization of special multicrystalline Si ingot by dendritic growth under high undercooling. Grain boundaries (GBs), dislocations, and their interaction with carbon related precipitates were investigated. The difference between grains from dendrite and non-dendrite growth was compared. In dendrite grains, parallel twins were frequently found. In non-dendrite grains, irregular GBs of various characters co-existed. Both parallel twins and irregular GBs exhibited dark EBIC contrast at room temperature, indicating the presence of minority carrier recombination centers due to impurity contamination. However, sometimes in non-dendrite grains GBs were visualized with bright EBIC contrast with enhanced collection of charge carriers. The origin of the abnormal bright EBIC contrast was explored and it turned out to be SiC related precipitates, which made GBs conduction channels for electron transport.

AB - This paper reports on electron-beam-induced current (EBIC) characterization of special multicrystalline Si ingot by dendritic growth under high undercooling. Grain boundaries (GBs), dislocations, and their interaction with carbon related precipitates were investigated. The difference between grains from dendrite and non-dendrite growth was compared. In dendrite grains, parallel twins were frequently found. In non-dendrite grains, irregular GBs of various characters co-existed. Both parallel twins and irregular GBs exhibited dark EBIC contrast at room temperature, indicating the presence of minority carrier recombination centers due to impurity contamination. However, sometimes in non-dendrite grains GBs were visualized with bright EBIC contrast with enhanced collection of charge carriers. The origin of the abnormal bright EBIC contrast was explored and it turned out to be SiC related precipitates, which made GBs conduction channels for electron transport.

KW - Dendrite

KW - EBIC

KW - Grain boundaries

KW - mc-Si

UR - http://www.scopus.com/inward/record.url?scp=85051808565&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85051808565&partnerID=8YFLogxK

U2 - 10.3390/cryst8080317

DO - 10.3390/cryst8080317

M3 - Article

AN - SCOPUS:85051808565

VL - 8

JO - Crystals

JF - Crystals

SN - 2073-4352

IS - 8

M1 - 317

ER -

Investigation of Si dendrites by electron-beam-induced current

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this