Investigation of resistance switching properties in undoped and Indium doped SrTiO3 thin films prepared by pulsed laser deposition

Weidong Yu, Xiaomin Li, Iun Zuan, Lidong Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the undoped SrTiO3 (STO) and Indium doped STO (SrTi1-xInxO3: STIO) thin films were grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition with low substrate temperature. For undoped STO film, the influences of the forming processes on their resistive switching properties were studied by current and voltage controlled I-V sweeps, respectively. An obvious current controlled negative differential conductance phenomenon was found in both polarities of the electrical field. However, for low Indium doped STIO (x=0.1 ), the filament related resistance switching was observed in both the current and voltage I-V sweeps. And for high Indium doped STIO (x=0.2), a resistance switching with a reverse direction change to that in undoped STO can be obtained by a proper forming process. Based on these results, the reversible change of the Schottky like barrier at the grain boundary by the migration of oxygen vacancies were proposed to interpret the mechanism of the resistance switching.

Original languageEnglish
Title of host publicationMaterials and Physics for Nonvolatile Memories
Pages123-128
Number of pages6
Publication statusPublished - 2009 Dec 1
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2009 Apr 132009 Apr 17

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1160
ISSN (Print)0272-9172

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period09/4/1309/4/17

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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