The radiative and nonradiative trap centers (RD1 and RD2) in two sets of ZnSe:Al layers in a carrier compensation region was studied in terms of photoluminescence (PL) and photocapacitance (PHCAP) measurements. It was found that while a lightly doped ZnSe:Al layer showed dominant donor bound exciton emission in a PL spectrum, a heavily doped ZnSe:Al layer showed strong deep-level emission by radiative trap centers. It was also found that a lightly doped ZnSe:Al layer showed weak photocapacitance while a heavily doped ZnSe:Al layer showed strong illumination dependence, which also had another center. It was also found that RD1 and RD2 and one nonradiative trap center contributed to the carrier compensation on the ZnSe:Al layers.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2004 May 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering