Investigation of radiative and nonradiative trap centers in ZnSe:Al layers grown by molecular beam epitaxy

D. C. Oh; H. Makino; Takashi Hanada; M. W. Cho; T. Yao; J. S. Song; J. H. Chang; F. Lu

Investigation of radiative and nonradiative trap centers in ZnSe:Al layers grown by molecular beam epitaxy

D. C. Oh, H. Makino, Takashi Hanada, M. W. Cho, T. Yao, J. S. Song, J. H. Chang, F. Lu

Materials Design Division

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The radiative and nonradiative trap centers (RD1 and RD2) in two sets of ZnSe:Al layers in a carrier compensation region was studied in terms of photoluminescence (PL) and photocapacitance (PHCAP) measurements. It was found that while a lightly doped ZnSe:Al layer showed dominant donor bound exciton emission in a PL spectrum, a heavily doped ZnSe:Al layer showed strong deep-level emission by radiative trap centers. It was also found that a lightly doped ZnSe:Al layer showed weak photocapacitance while a heavily doped ZnSe:Al layer showed strong illumination dependence, which also had another center. It was also found that RD1 and RD2 and one nonradiative trap center contributed to the carrier compensation on the ZnSe:Al layers.

Original language	English
Pages (from-to)	1475-1478
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	3
Publication status	Published - 2004 May 1

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Investigation of radiative and nonradiative trap centers in ZnSe:Al layers grown by molecular beam epitaxy. / Oh, D. C.; Makino, H.; Hanada, Takashi; Cho, M. W.; Yao, T.; Song, J. S.; Chang, J. H.; Lu, F.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 3, 01.05.2004, p. 1475-1478.

Research output: Contribution to journal › Article › peer-review

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abstract = "The radiative and nonradiative trap centers (RD1 and RD2) in two sets of ZnSe:Al layers in a carrier compensation region was studied in terms of photoluminescence (PL) and photocapacitance (PHCAP) measurements. It was found that while a lightly doped ZnSe:Al layer showed dominant donor bound exciton emission in a PL spectrum, a heavily doped ZnSe:Al layer showed strong deep-level emission by radiative trap centers. It was also found that a lightly doped ZnSe:Al layer showed weak photocapacitance while a heavily doped ZnSe:Al layer showed strong illumination dependence, which also had another center. It was also found that RD1 and RD2 and one nonradiative trap center contributed to the carrier compensation on the ZnSe:Al layers.",

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AU - Oh, D. C.

AU - Makino, H.

AU - Hanada, Takashi

AU - Cho, M. W.

AU - Yao, T.

AU - Song, J. S.

AU - Chang, J. H.

AU - Lu, F.

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