Investigation of Piezoelectricity and Curie Temperature of Pb(Mg1/3, Nb2/3)O3-PbTiO3 Epitaxial Thin Film on Si Prepared by Sputter Deposition with Fast Cooling

Shinya Yoshida, Takumi Morimura, Kiyotaka Wasa, Shuji Tanaka

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


This paper reports on an abnormally high Curie temperature (Tc) of a Pb(Mg1/3, Nb2/3)O3-PbTiO3 (PMN-PT) epitaxial thin film on Si prepared by sputter deposition with fast cooling. This deposition method was previously applied to Pb(Mn, Nb)O3-Pb(Zr, Ti)O3, and a c-axis-oriented epitaxial film with high Tc was obtained. Using the same method, a crack-free 2- μ m -thick PMN-PT thin film was epitaxially grown on a Si substrate covered with buffer layers. The piezoelectricity, |e31,f|, was as large as 1819 C/m2 under an electric field ranging from 25 to 75 kV/cm. The temperature characteristics of the dielectric constant and crystalline structure were significantly different from those of a bulk single crystal of PMN-PT, and suggested Tc higher than 500 °C. The enhanced Tc was possibly caused by thermally induced compressive strain received from the Si substrate. This approach can be an effective method for breaking the well-known tradeoff relationship between piezoelectricity and Tc of a piezoelectric thin film.

Original languageEnglish
Article number8385124
Pages (from-to)1695-1702
Number of pages8
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Issue number9
Publication statusPublished - 2018 Sep


  • Curie temperature
  • Pb(Mg, Nb)O-PbTiO
  • ferroelectric films
  • microelectromechanical systems (MEMSs)
  • piezoelectric film

ASJC Scopus subject areas

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering


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