Investigation of new stacking surface passivation structures with interfacial tuning layers on p-type crystalline silicon

Norihiro Ikeno, Taka Aki Katsumata, Haruhiko Yoshida, Koji Arafune, Shin Ichi Satoh, Toyohiro Chikyow, Atsushi Ogura

Research output: Contribution to journalArticle

Abstract

We fabricated a Y2O3-ZrO2 film (YZO) on Al2O3 to achieve the field effect passivation with high negative fixed charge densities on p-type Si. The surface recombination velocity was improved down to 30cm/s after annealing at 400 °C. This improvement can be attributed to the effective fixed charge enhancement while the interface state densities were kept almost constant. A high thermal tolerance of over 600 °C upon inserting a 2-nmthick ZrO2 layer between the YZO and Al2O3 interface was confirmed. This result showed that the ZrO2 layer acts as a protective barrier to prevent Al and Y interdiffusions. Annealing at a higher temperature of 800 °C resulted in interface degradation and YZO crystallization, which led to the deterioration of the passivation properties.

Original languageEnglish
Article number04ES03
JournalJapanese journal of applied physics
Volume55
Issue number4
DOIs
Publication statusPublished - 2016 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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