TY - JOUR
T1 - Investigation of new stacking surface passivation structures with interfacial tuning layers on p-type crystalline silicon
AU - Ikeno, Norihiro
AU - Katsumata, Taka Aki
AU - Yoshida, Haruhiko
AU - Arafune, Koji
AU - Satoh, Shin Ichi
AU - Chikyow, Toyohiro
AU - Ogura, Atsushi
PY - 2016/4
Y1 - 2016/4
N2 - We fabricated a Y2O3-ZrO2 film (YZO) on Al2O3 to achieve the field effect passivation with high negative fixed charge densities on p-type Si. The surface recombination velocity was improved down to 30cm/s after annealing at 400 °C. This improvement can be attributed to the effective fixed charge enhancement while the interface state densities were kept almost constant. A high thermal tolerance of over 600 °C upon inserting a 2-nmthick ZrO2 layer between the YZO and Al2O3 interface was confirmed. This result showed that the ZrO2 layer acts as a protective barrier to prevent Al and Y interdiffusions. Annealing at a higher temperature of 800 °C resulted in interface degradation and YZO crystallization, which led to the deterioration of the passivation properties.
AB - We fabricated a Y2O3-ZrO2 film (YZO) on Al2O3 to achieve the field effect passivation with high negative fixed charge densities on p-type Si. The surface recombination velocity was improved down to 30cm/s after annealing at 400 °C. This improvement can be attributed to the effective fixed charge enhancement while the interface state densities were kept almost constant. A high thermal tolerance of over 600 °C upon inserting a 2-nmthick ZrO2 layer between the YZO and Al2O3 interface was confirmed. This result showed that the ZrO2 layer acts as a protective barrier to prevent Al and Y interdiffusions. Annealing at a higher temperature of 800 °C resulted in interface degradation and YZO crystallization, which led to the deterioration of the passivation properties.
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U2 - 10.7567/JJAP.55.04ES03
DO - 10.7567/JJAP.55.04ES03
M3 - Article
AN - SCOPUS:84963669732
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4
M1 - 04ES03
ER -