Investigation of n-channel triple-gate metal-oxide-semiconductor field-effect transistors on (100) silicon on insulator substrate

Kazuhiko Endo, Meishoku Masahara, Yongxun Liu, Takashi Matsukawa, Kenichi Ishii, Etsurou Sugimata, Hidenori Takashima, Hiromi Yamauchi, Eiichi Suzuki

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

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Physics