Investigation of n-channel triple-gate metal-oxide-semiconductor field-effect transistors on (100) silicon on insulator substrate

Kazuhiko Endo, Meishoku Masahara, Yongxun Liu, Takashi Matsukawa, Kenichi Ishii, Etsurou Sugimata, Hidenori Takashima, Hiromi Yamauchi, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We have investigated the fabrication processes and device characteristics for n-channel triple-gate metal-oxide-semi-conductor field-effect transistors (MOSFETs) on (100) silicon-on-insulator substrates. By optimizing the diagonal ion implantation conditions for the narrow fin channel, the fabricated triple-gate device showed an electron mobility almost compatible to a planar MOSFET with a supreme subthreshold slope of 64mV/decade and drain induced barrier lowering DIBL of 15 mV/V

Original languageEnglish
Pages (from-to)3097-3100
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - 2006 Apr 25
Externally publishedYes

Keywords

  • Dopant profile
  • Ion implantation
  • Mobility
  • Sub-threshold
  • Triple-gate

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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