Investigation of indium incorporation into InGaN by nitridation of sapphire substrate in MOVPE

Jung Hun Choi, Kanako Shojiki, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

InGaN films on nitride-sapphire substrates were grown by metalorganic vapor phase epitaxy. Reciprocal space mappings of X-ray diffraction around the $(10\bar15)$ asymmetric plane were used to measure the accurate indium composition and in-plane strain of InGaN films. InGaN films with nitridation of sapphire substrates shows higher indium incorporation than without nitridation samples at low molar fraction ratio, TMIn/(TMIn+TEGa), of group-III MO source. However, the high molar fraction ratio region shows relatively low indium composition of InGaN. Most of the InGaN on nitrided sapphire substrates showed narrow FWHM of 2θ -ω and X-ray rocking curves and the surface flatness is improved, which indicates the improvement of crystal quality.

Original languageEnglish
Pages (from-to)417-420
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume10
Issue number3
DOIs
Publication statusPublished - 2013 Mar 1

Keywords

  • InGaN
  • MOVPE
  • Nitridation
  • Reciprocal space mapping

ASJC Scopus subject areas

  • Condensed Matter Physics

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