Investigation of hydrogen chemisorption on GaAs (111)A Ga surface by in situ monitoring and ab initio calculation

Yuriko Matsuo, Mikihiko Nimura, Akinori Koukitu, Yoshinao Kumagai, Hisashi Seki, Seiichi Takami, Momoji Kubo, Akira Miyamoto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Hydrogen chemisorption on the GaAs (111)A Ga surface is investigated under atmospheric pressure using an in situ optical monitoring system which consists of GaAs halogen transport atomic layer epitaxy (ALE) and surface photoabsorption (SPA) systems. The results of the in situ monitoring indicate the existence of a stable hydrogen-terminated surface. It is shown that hydrogen in the carrier gas reacts dissociatively with the (111)A Ga surface, and the relationship between the surface hydrogen coverage and hydrogen partial pressure is explained well by the Langmuir isotherm with dissociation. Atomic configuration on the surface is examined further by means of ab initio molecular dynamics calculation. The total energy change due to the calculated process is very close to the standard enthalpy of adsorption obtained by the experiment.

Original languageEnglish
Pages (from-to)6174-6179
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number11
DOIs
Publication statusPublished - 2000 Nov

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Investigation of hydrogen chemisorption on GaAs (111)A Ga surface by in situ monitoring and ab initio calculation'. Together they form a unique fingerprint.

  • Cite this