High-field magnetospectroscopy measurements on HgSe/HgSe: Fe quantum wells and superlattices are reported. Fe2+ substitution of Hg2+ manifests itself in a donor about 210 meV above the conduction band edge and thus for sufficiently high carrier concentration as a Fermi level pinned system in the mixed valence regime. The MBE-grown samples on ZnTe/GaAs substrates exhibit 2D effects for characteristic well or superlattice dimensions < 20 nm. Strong anisotropy effects due to strain are observed. By variation of the size quantization the predicted transition from a 2D to 3D QHE for Fermi level pinned systems is demonstrated.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering