TY - JOUR
T1 - Investigation of growth mechanism for ingan by metal-organic vapor phase epitaxy using computational fluid simulation
AU - Deura, Momoko
AU - Ichinohe, Fumitaka
AU - Arai, Yu
AU - Shiohama, Kenichi
AU - Hirako, Akira
AU - Ohkawa, Kazuhiro
PY - 2013/8/1
Y1 - 2013/8/1
N2 - We investigated the mechanism of metal-organic vapor phase epitaxy (MOVPE) growth for InGaN by comparing experimental and simulation results. The simulation results showed a similar trend to the experimental results. Therefore, the simulation system can be used to speculate on physical and chemical phenomena through the behavior of precursors. InGaN growth is largely affected by the amounts of both trimethylindium (TMIn) and NH3 supplied. This is because InN growth is dependent on the amount of NH2 physisorbed on a surface, which is generated by NH3. Moreover, the decomposition of crystallized InN and the desorption of these decomposed precursors of InN during growth cannot be ignored.
AB - We investigated the mechanism of metal-organic vapor phase epitaxy (MOVPE) growth for InGaN by comparing experimental and simulation results. The simulation results showed a similar trend to the experimental results. Therefore, the simulation system can be used to speculate on physical and chemical phenomena through the behavior of precursors. InGaN growth is largely affected by the amounts of both trimethylindium (TMIn) and NH3 supplied. This is because InN growth is dependent on the amount of NH2 physisorbed on a surface, which is generated by NH3. Moreover, the decomposition of crystallized InN and the desorption of these decomposed precursors of InN during growth cannot be ignored.
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U2 - 10.7567/JJAP.52.08JB13
DO - 10.7567/JJAP.52.08JB13
M3 - Article
AN - SCOPUS:84883163192
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8 PART 2
M1 - 08JB13
ER -