Investigation of growth mechanism for ingan by metal-organic vapor phase epitaxy using computational fluid simulation

Momoko Deura; Fumitaka Ichinohe; Yu Arai; Kenichi Shiohama; Akira Hirako; Kazuhiro Ohkawa

doi:10.7567/JJAP.52.08JB13

Investigation of growth mechanism for ingan by metal-organic vapor phase epitaxy using computational fluid simulation

Momoko Deura, Fumitaka Ichinohe, Yu Arai, Kenichi Shiohama, Akira Hirako, Kazuhiro Ohkawa

Materials Design Division

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the mechanism of metal-organic vapor phase epitaxy (MOVPE) growth for InGaN by comparing experimental and simulation results. The simulation results showed a similar trend to the experimental results. Therefore, the simulation system can be used to speculate on physical and chemical phenomena through the behavior of precursors. InGaN growth is largely affected by the amounts of both trimethylindium (TMIn) and NH₃ supplied. This is because InN growth is dependent on the amount of NH2 physisorbed on a surface, which is generated by NH₃. Moreover, the decomposition of crystallized InN and the desorption of these decomposed precursors of InN during growth cannot be ignored.

Original language	English
Article number	08JB13
Journal	Japanese journal of applied physics
Volume	52
Issue number	8 PART 2
DOIs	https://doi.org/10.7567/JJAP.52.08JB13
Publication status	Published - 2013 Aug 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAP.52.08JB13

Fingerprint Dive into the research topics of 'Investigation of growth mechanism for ingan by metal-organic vapor phase epitaxy using computational fluid simulation'. Together they form a unique fingerprint.

Cite this

@article{bc7a9d565dbd47b19fa981561d690a73,

title = "Investigation of growth mechanism for ingan by metal-organic vapor phase epitaxy using computational fluid simulation",

abstract = "We investigated the mechanism of metal-organic vapor phase epitaxy (MOVPE) growth for InGaN by comparing experimental and simulation results. The simulation results showed a similar trend to the experimental results. Therefore, the simulation system can be used to speculate on physical and chemical phenomena through the behavior of precursors. InGaN growth is largely affected by the amounts of both trimethylindium (TMIn) and NH3 supplied. This is because InN growth is dependent on the amount of NH2 physisorbed on a surface, which is generated by NH3. Moreover, the decomposition of crystallized InN and the desorption of these decomposed precursors of InN during growth cannot be ignored.",

author = "Momoko Deura and Fumitaka Ichinohe and Yu Arai and Kenichi Shiohama and Akira Hirako and Kazuhiro Ohkawa",

year = "2013",

month = aug,

day = "1",

doi = "10.7567/JJAP.52.08JB13",

language = "English",

volume = "52",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8 PART 2",

}

TY - JOUR

T1 - Investigation of growth mechanism for ingan by metal-organic vapor phase epitaxy using computational fluid simulation

AU - Deura, Momoko

AU - Ichinohe, Fumitaka

AU - Arai, Yu

AU - Shiohama, Kenichi

AU - Hirako, Akira

AU - Ohkawa, Kazuhiro

PY - 2013/8/1

Y1 - 2013/8/1

N2 - We investigated the mechanism of metal-organic vapor phase epitaxy (MOVPE) growth for InGaN by comparing experimental and simulation results. The simulation results showed a similar trend to the experimental results. Therefore, the simulation system can be used to speculate on physical and chemical phenomena through the behavior of precursors. InGaN growth is largely affected by the amounts of both trimethylindium (TMIn) and NH3 supplied. This is because InN growth is dependent on the amount of NH2 physisorbed on a surface, which is generated by NH3. Moreover, the decomposition of crystallized InN and the desorption of these decomposed precursors of InN during growth cannot be ignored.

AB - We investigated the mechanism of metal-organic vapor phase epitaxy (MOVPE) growth for InGaN by comparing experimental and simulation results. The simulation results showed a similar trend to the experimental results. Therefore, the simulation system can be used to speculate on physical and chemical phenomena through the behavior of precursors. InGaN growth is largely affected by the amounts of both trimethylindium (TMIn) and NH3 supplied. This is because InN growth is dependent on the amount of NH2 physisorbed on a surface, which is generated by NH3. Moreover, the decomposition of crystallized InN and the desorption of these decomposed precursors of InN during growth cannot be ignored.

UR - http://www.scopus.com/inward/record.url?scp=84883163192&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883163192&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.08JB13

DO - 10.7567/JJAP.52.08JB13

M3 - Article

AN - SCOPUS:84883163192

VL - 52

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 PART 2

M1 - 08JB13

ER -