Investigation of graphene field effect transistors with al 2O3 gate dielectrics formed by metal oxidation

Myung Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We propose the epitaxial graphene field-effect transistors (EG-FETs) with Al2O3 gate dielectric formed by metal oxidation on semi-insulating 6HSiC substrate. The Al2O3 gate dielectric layer was formed by thermally oxidizing a thin Al film at 500°C in an O2 ambient. The electrical characteristics of EG-FETs with Al2O3 gate dielectric have been investigated, which exhibits p-type behavior with the field effect mobility of 120 cm2 V-1 s-1. After the Al2O3 formation, the FWHM of G0 and D peaks in the Raman-scattering spectra increased, indicating degradation of graphene and thereby accounting for the low field effect mobility of the EG-FETs. This finding suggests that the optimization of post growth heat treatments, such as oxidation and metallization, should play a decisive role in tuning the quality of graphene and the performance of the device made thereof.

Original languageEnglish
Article number070111
JournalJapanese journal of applied physics
Volume50
Issue number7 PART 1
DOIs
Publication statusPublished - 2011 Jul 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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