Investigation of electronic states of infinite-layer SrFeO 2 epitaxial thin films by X-ray photoemission and absorption spectroscopies

Akira Chikamatsu, Toshiya Matsuyama, Yasushi Hirose, Hiroshi Kumigashira, Masaharu Oshima, Tetsuya Hasegawa

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

We investigated the electronic states of a single-crystal SrFeO 2 epitaxial thin film in the valence-band and conduction-band regions using synchrotron-radiation X-ray photoemission and absorption spectroscopies. Fe 2p-3d resonant photoemission measurements revealed that the Fe 3d states have higher densities of states at binding energies of 3-5 eV and 5-8.5 eV in the valence-band region. The O K-edge X-ray absorption spectrum exhibited three peaks in the Fe 3d-derived conduction band hybridized with O 2p states; these can be assigned to Fe 3d xy, 3d xz + 3d yz, and 3d x 2 -y 2. In addition, the indirect bandgap value of the SrFeO 2 film was determined to be 1.3 eV by transmission and absorption spectroscopies.

Original languageEnglish
Pages (from-to)547-550
Number of pages4
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume184
Issue number11-12
DOIs
Publication statusPublished - 2012 Jan 1
Externally publishedYes

Keywords

  • Electronic states
  • Epitaxial thin films
  • Optical gap
  • Photoemission spectroscopy
  • SrFeO
  • X-ray absorption spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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