Abstract
We investigated the electronic states of a single-crystal SrFeO 2 epitaxial thin film in the valence-band and conduction-band regions using synchrotron-radiation X-ray photoemission and absorption spectroscopies. Fe 2p-3d resonant photoemission measurements revealed that the Fe 3d states have higher densities of states at binding energies of 3-5 eV and 5-8.5 eV in the valence-band region. The O K-edge X-ray absorption spectrum exhibited three peaks in the Fe 3d-derived conduction band hybridized with O 2p states; these can be assigned to Fe 3d xy, 3d xz + 3d yz, and 3d x 2 -y 2. In addition, the indirect bandgap value of the SrFeO 2 film was determined to be 1.3 eV by transmission and absorption spectroscopies.
Original language | English |
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Pages (from-to) | 547-550 |
Number of pages | 4 |
Journal | Journal of Electron Spectroscopy and Related Phenomena |
Volume | 184 |
Issue number | 11-12 |
DOIs | |
Publication status | Published - 2012 Jan 1 |
Externally published | Yes |
Keywords
- Electronic states
- Epitaxial thin films
- Optical gap
- Photoemission spectroscopy
- SrFeO
- X-ray absorption spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Radiation
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Spectroscopy
- Physical and Theoretical Chemistry