Investigation of domain structure and electrical properties of monoclinic epitaxial zirconia buffer layer

Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

Research output: Contribution to journalArticlepeer-review

Abstract

Epitaxial ZrO2 buffer layers of monoclinic phase have been grow on p-Si(001) wafers. The thickness of the buffer layer is 17nm and 3nm. Wide angle X-ray reciprocal space mapping and high resolution transmission electron microscope (HRTEM) analysis have shown that many ferroelastic 90° and 180° domains, of which 001 plane align nearly in out-of plane direction for 17nm ZrO2 buffer layer, and that nano-sized monoclinic phase has coherently precipitated in tetragonal matrix for 3nm ZiO2 buffer layer. Capacitance-Voltage (C-V) measurement has shown that the C-V curve of ZrO2 buffer layer showed charge-injection type hysteresis. The width has been 26mV for 17nm ZrO2 buffer layer and 2mV for 3nm ZrO 2 buffer layer, which correspond to the density of oxide-trapped charge of 2.4×1011cm-2and 2.8×10 11cm-2, respectively. The density of interface-trapped charge has been 2×1011cm-2 · eV -1, and 9.7×1010cm-2 · eV -1,respectively.

Original languageEnglish
Pages (from-to)261-264
Number of pages4
JournalKey Engineering Materials
Volume301
DOIs
Publication statusPublished - 2006 Jan 1
Externally publishedYes

Keywords

  • Buffer layer
  • C-V characteristics
  • Domain structure
  • Interface-trapped charge
  • Monoclinic phase
  • Oxide - trapped charge
  • Tetragonal phase
  • Zirconia

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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