Investigation of direct and indirect band gaps of [100]-oriented nearly strain-free β-FeSi2 films grown by molecular-beam epitaxy

Ken Ichiro Takakura, Noriyoshi Hiroi, Takashi Suemasu, Shigefusa F. Chichibu, Fumio Hasegawa

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Optical absorption (OA) spectra of [100]-oriented, nearly strain-free β-FeSi2 continuous films grown by molecular-beam epitaxy were investigated. Although the film is a multidomain epilayer, the OA spectra of the annealed film were fitted well by the sum of the contributions from both direct and indirect absorption transitions for a wide range of temperatures from 77 to 300 K. The indirect absorption edge of 0.78 eV obtained at 77 K agreed with the effective band gap energy obtained from temperature dependence of the carrier density.

Original languageEnglish
Pages (from-to)556-558
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number4
DOIs
Publication statusPublished - 2002 Jan 28
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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