Abstract
From the transmission electron microscope (TEM) observation of ZnSe homoepitaxial films, it is clarified that the major pre-existing defects in the film are Shockley extended dislocations. Correlation between the etch pits and the Shockley extended dislocations are also confirmed. The degradation mode of a ZnCdSe/ZnSe homoepitaxial light emitting diode (LED) is discussed on the basis of the microscopic observation. Many dark spot defects (DSDs) are observed in the emission pattern just after turn-on, and they enlarge and become pronounced keeping their round shape. The growth velocity of the DSD is less than 0.056 μm/min for the current density of 408 A/cm2. The DSD density is almost the same as the etch pit density (EPD) of the as-grown LED wafer.
| Original language | English |
|---|---|
| Pages (from-to) | L190-L193 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 36 |
| Issue number | 2 SUPPL. B |
| DOIs | |
| Publication status | Published - 1997 Feb 15 |
| Externally published | Yes |
Keywords
- Dark spot
- Degradation
- Etch pit
- Homoepitaxy
- Light emitting diode
- Transmission electron microscope
- ZnSe
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)