Investigation of crystal growth behavior of silicon melt for growing high quality polycrystalline silicon by cast method

Kozo Fujiwara, Noritaka Usami, Yoshitaro Nose, Gen Sazaki, Kazuo Nakajima

Research output: Contribution to journalConference articlepeer-review

Abstract

We investigated crystal growth behaviors of silicon melt by using an in-situ monitoring system consisting of a furnace and a microscope. Morphology of solid/liquid interface and directional growth processes of polycrystalline silicon were directly observed. We found two kinds of grain expanding mechanisms. It is suggested that we can control a dominant orientation on a wafer surface of polycrystalline silicon by controlling those two mechanisms during casting method.

Original languageEnglish
Pages (from-to)1081-1083
Number of pages3
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Publication statusPublished - 2005 Nov 30
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: 2005 Jan 32005 Jan 7

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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