Investigation of Co doped CGO buffer layer for intermediate-temperature SOFC

Z. Wang, S. Hashimoto, M. Mori

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The sintering characteristics of Ce0.9Gd0.1O 1.95 (CGO) with various specific surface areas and Zr 0.89Sc0.1Ce0.01O1.95 (ScSZ) content have been measured. Cobalt-doped CGO can be used as a buffer layer on a ScSZ electrolyte for anode-supported solid oxide fuel cells with intermediate- temperature operation. By addition of ScSZ, the densifications of all CGO samples were markedly lowered. The Co-doping of CGO enhanced its densification and improved the increase of densification with increasing specific surface area.

Original languageEnglish
Title of host publicationECS Transactions - Solid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting
Pages203-210
Number of pages8
Edition51
DOIs
Publication statusPublished - 2008 Dec 1
EventSolid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 12 → 2008 Oct 17

Publication series

NameECS Transactions
Number51
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSolid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/12 → 08/10/17

ASJC Scopus subject areas

  • Engineering(all)

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    Wang, Z., Hashimoto, S., & Mori, M. (2008). Investigation of Co doped CGO buffer layer for intermediate-temperature SOFC. In ECS Transactions - Solid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting (51 ed., pp. 203-210). (ECS Transactions; Vol. 16, No. 51). https://doi.org/10.1149/1.3242235