Investigation of carrier recombination process in top-down fabricated GaAs nano-disc array structure by photoluminescence measurements

T. Ikari, D. Ohori, A. Higo, C. Thomas, S. Samukawa, K. Nishioka, A. Fukuyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This New top-down fabrication process using bio-template and neutral beam etching process have succeeded to grow GaAs quantum nano disc (ND) for optical communication devices. The size, the alignment and the density of ND were well controlled. Low temperature photoluminescence measurement confirmed that the quantum energy levels were formed in the present structure and made clear the usefulness of the top-down process toward a defect-free ND fabrication. Strong luminescence was observed even in an as-etched samples.

Original languageEnglish
Title of host publicationNanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509043521
DOIs
Publication statusPublished - 2016 Dec 7
Event11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016 - Toulouse, France
Duration: 2016 Oct 92016 Oct 12

Publication series

NameNanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings

Other

Other11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016
CountryFrance
CityToulouse
Period16/10/916/10/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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