Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT)

J. S. An, C. M. Choi, Y. Shindo, Y. Sutou, H. S. Jeong, Y. H. Song

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge1Cu2Te3 is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude.

Original languageEnglish
Pages (from-to)1514-1516
Number of pages3
JournalElectronics Letters
Volume52
Issue number18
DOIs
Publication statusPublished - 2016 Sep 2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Investigation of an erasing method for synaptic behaviour in a phase change device using Ge<sub>1</sub>Cu<sub>2</sub>Te<sub>3</sub> (GCT)'. Together they form a unique fingerprint.

Cite this