TY - JOUR
T1 - Investigation for (100)-/(001)-oriented pb(zr,ti)o3 films using platinum nanofacets and pbtio3 seeding layer
AU - Matsuo, Hirokazu
AU - Kawai, Yusuke
AU - Tanaka, Shuji
AU - Esashi, Masayoshi
PY - 2010/6/1
Y1 - 2010/6/1
N2 - The (100)-/(001)-oriented Pb(Zr,Ti)O3 films using Pt nanofacets and PbTiO3 seeding layer were invesigated. The Ti/Pt electrodes were deposited using a sputtering system. Pb(Zr,Ti)O3 and PbTiO3 seeding layer were deposited using a semi-homemade metal organic chemical vapor deposition (MOCVD) apparatus. The Pt nanofacets on hillocks caused by Ti diffusion and compressive stress can be prepared by preannealing of the electrode on the substrate. The most highly (100)-/(001)-oriented Pb(Zr,Ti)O3 films were obtained with the same thickness deposition of the PbTiO3 seeding layer as the half value of maximum roughness (Rz) of the Pt surface, which is approximately 3.5-4.0 nm. A simple (100)/(001) orientation method was developed without any special oxide metal electrodes or single-crystal substrates for orientation using commonly unpreferable hillocks, which cause the problems. This simple method is suitable for commercial applications in the future.
AB - The (100)-/(001)-oriented Pb(Zr,Ti)O3 films using Pt nanofacets and PbTiO3 seeding layer were invesigated. The Ti/Pt electrodes were deposited using a sputtering system. Pb(Zr,Ti)O3 and PbTiO3 seeding layer were deposited using a semi-homemade metal organic chemical vapor deposition (MOCVD) apparatus. The Pt nanofacets on hillocks caused by Ti diffusion and compressive stress can be prepared by preannealing of the electrode on the substrate. The most highly (100)-/(001)-oriented Pb(Zr,Ti)O3 films were obtained with the same thickness deposition of the PbTiO3 seeding layer as the half value of maximum roughness (Rz) of the Pt surface, which is approximately 3.5-4.0 nm. A simple (100)/(001) orientation method was developed without any special oxide metal electrodes or single-crystal substrates for orientation using commonly unpreferable hillocks, which cause the problems. This simple method is suitable for commercial applications in the future.
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U2 - 10.1143/JJAP.49.061503
DO - 10.1143/JJAP.49.061503
M3 - Article
AN - SCOPUS:77955320098
VL - 49
SP - 615031
EP - 615034
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 PART 1
ER -