INVESTIGATION AND REDUCTION OF HOT ELECTRON INDUCED PUNCHTHROUGH (HEIP) EFFECT IN SUBMICRON PMOSFETS.

M. Koyanagi, A. G. Lewis, J. Zhu, R. A. Martin, T. Y. Huang, J. Y. Chen

Research output: Contribution to journalConference article

38 Citations (Scopus)

Abstract

Hot carrier reliability in submicrometer PMOSFETs has been investigated. The punch-through voltage is seriously reduced due to hot electron induced punch-through (HEIP) in submicrometer PMOSFETs. In order to mitigate the HEIP effect, a lightly doped drain (LDD) PMOSFET has been optimized by examining the channel electric field, substrate and gate currents, and the threshold voltage shifts due to hot electron injection. A device lifetime of more than 10 years has been obtained using LDD PMOSFETs with gate lengths of 0. 8 mu m at the worst case supply voltage (5. 5 V).

Original languageEnglish
Pages (from-to)722-725
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
Publication statusPublished - 1986 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'INVESTIGATION AND REDUCTION OF HOT ELECTRON INDUCED PUNCHTHROUGH (HEIP) EFFECT IN SUBMICRON PMOSFETS.'. Together they form a unique fingerprint.

  • Cite this