Abstract
Hot carrier reliability in submicrometer PMOSFETs has been investigated. The punch-through voltage is seriously reduced due to hot electron induced punch-through (HEIP) in submicrometer PMOSFETs. In order to mitigate the HEIP effect, a lightly doped drain (LDD) PMOSFET has been optimized by examining the channel electric field, substrate and gate currents, and the threshold voltage shifts due to hot electron injection. A device lifetime of more than 10 years has been obtained using LDD PMOSFETs with gate lengths of 0. 8 mu m at the worst case supply voltage (5. 5 V).
Original language | English |
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Pages (from-to) | 722-725 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
DOIs | |
Publication status | Published - 1986 Jan 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry