Investigation about I-V characteristics in a new electronic structure model of the Ohmic contact for future nano-scale Ohmic contact

Yukihiro Takada, Masakazu Muraguchi, Tetsuo Endoh, Shintaro Nomura, Kenji Shiraishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ohmic contacts are crucial for both device applications and the study of fundamental physics. From the perspective of device scaling trends, nano-scale Ohmic contacts are indispensable for future LSI technologies such as metallic source and drain contacts. In this study, we investigate the I-V characteristics using a varying discrete level distribution based on our previously-proposed model. Our calculated results show that linear I-V properties can be obtained from uniform discrete level distributions.

Original languageEnglish
Title of host publicationTechnology Evolution for Silicon Nano-Electronics
PublisherTrans Tech Publications Ltd
Pages43-47
Number of pages5
ISBN (Print)9783037850510
DOIs
Publication statusPublished - 2011

Publication series

NameKey Engineering Materials
Volume470
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Keywords

  • Landauer's formula
  • Metallic source/drain
  • Ohmic contact

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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