Investigation about I-V characteristics in a new electronic structure model of the Ohmic contact for future nano-scale Ohmic contact

Yukihiro Takada; Masakazu Muraguchi; Tetsuo Endoh; Shintaro Nomura; Kenji Shiraishi

doi:10.4028/www.scientific.net/KEM.470.43

Investigation about I-V characteristics in a new electronic structure model of the Ohmic contact for future nano-scale Ohmic contact

Yukihiro Takada, Masakazu Muraguchi, Tetsuo Endoh, Shintaro Nomura, Kenji Shiraishi

ENG - Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ohmic contacts are crucial for both device applications and the study of fundamental physics. From the perspective of device scaling trends, nano-scale Ohmic contacts are indispensable for future LSI technologies such as metallic source and drain contacts. In this study, we investigate the I-V characteristics using a varying discrete level distribution based on our previously-proposed model. Our calculated results show that linear I-V properties can be obtained from uniform discrete level distributions.

Original language	English
Title of host publication	Technology Evolution for Silicon Nano-Electronics
Publisher	Trans Tech Publications Ltd
Pages	43-47
Number of pages	5
ISBN (Print)	9783037850510
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.470.43
Publication status	Published - 2011

Publication series

Name	Key Engineering Materials
Volume	470
ISSN (Print)	1013-9826
ISSN (Electronic)	1662-9795

Keywords

Landauer's formula
Metallic source/drain
Ohmic contact

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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Takada, Y., Muraguchi, M., Endoh, T., Nomura, S., & Shiraishi, K. (2011). Investigation about I-V characteristics in a new electronic structure model of the Ohmic contact for future nano-scale Ohmic contact. In Technology Evolution for Silicon Nano-Electronics (pp. 43-47). (Key Engineering Materials; Vol. 470). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.470.43

Investigation about I-V characteristics in a new electronic structure model of the Ohmic contact for future nano-scale Ohmic contact. / Takada, Yukihiro; Muraguchi, Masakazu; Endoh, Tetsuo; Nomura, Shintaro; Shiraishi, Kenji.

Technology Evolution for Silicon Nano-Electronics. Trans Tech Publications Ltd, 2011. p. 43-47 (Key Engineering Materials; Vol. 470).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takada, Y, Muraguchi, M, Endoh, T, Nomura, S & Shiraishi, K 2011, Investigation about I-V characteristics in a new electronic structure model of the Ohmic contact for future nano-scale Ohmic contact. in Technology Evolution for Silicon Nano-Electronics. Key Engineering Materials, vol. 470, Trans Tech Publications Ltd, pp. 43-47. https://doi.org/10.4028/www.scientific.net/KEM.470.43

Takada Y, Muraguchi M, Endoh T, Nomura S, Shiraishi K. Investigation about I-V characteristics in a new electronic structure model of the Ohmic contact for future nano-scale Ohmic contact. In Technology Evolution for Silicon Nano-Electronics. Trans Tech Publications Ltd. 2011. p. 43-47. (Key Engineering Materials). https://doi.org/10.4028/www.scientific.net/KEM.470.43

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