@inproceedings{88238ce869c5469e9ef5b0d802d48771,
title = "Investigation about I-V characteristics in a new electronic structure model of the Ohmic contact for future nano-scale Ohmic contact",
abstract = "Ohmic contacts are crucial for both device applications and the study of fundamental physics. From the perspective of device scaling trends, nano-scale Ohmic contacts are indispensable for future LSI technologies such as metallic source and drain contacts. In this study, we investigate the I-V characteristics using a varying discrete level distribution based on our previously-proposed model. Our calculated results show that linear I-V properties can be obtained from uniform discrete level distributions.",
keywords = "Landauer's formula, Metallic source/drain, Ohmic contact",
author = "Yukihiro Takada and Masakazu Muraguchi and Tetsuo Endoh and Shintaro Nomura and Kenji Shiraishi",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2011",
doi = "10.4028/www.scientific.net/KEM.470.43",
language = "English",
isbn = "9783037850510",
series = "Key Engineering Materials",
publisher = "Trans Tech Publications Ltd",
pages = "43--47",
booktitle = "Technology Evolution for Silicon Nano-Electronics",
}