Investigating surface stress: Surface loss in ultrathin single-crystal silicon cantilevers

Jinling Yang, Ono Takahito, Masavoshi Esashi

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)

Abstract

The effect of surface modification on Q factors of ultrathin single-crystal silicon cantilevers with different thicknesses and different orientations was studied. Exposure to atomic hydrogen led to a larger relative increase of the Q factor in thinner structures than in thicker ones.

Original languageEnglish
Pages (from-to)551-556
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number2
DOIs
Publication statusPublished - 2001 Mar 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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