Investigating surface stress: Surface loss in ultrathin single-crystal silicon cantilevers

Jinling Yang; Ono Takahito; Masavoshi Esashi

doi:10.1116/1.1347040

Investigating surface stress: Surface loss in ultrathin single-crystal silicon cantilevers

Jinling Yang, Ono Takahito, Masavoshi Esashi

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

The effect of surface modification on Q factors of ultrathin single-crystal silicon cantilevers with different thicknesses and different orientations was studied. Exposure to atomic hydrogen led to a larger relative increase of the Q factor in thinner structures than in thicker ones.

Original language	English
Pages (from-to)	551-556
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	2
DOIs	https://doi.org/10.1116/1.1347040
Publication status	Published - 2001 Mar 1

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Investigating surface stress: Surface loss in ultrathin single-crystal silicon cantilevers",

abstract = "The effect of surface modification on Q factors of ultrathin single-crystal silicon cantilevers with different thicknesses and different orientations was studied. Exposure to atomic hydrogen led to a larger relative increase of the Q factor in thinner structures than in thicker ones.",

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AU - Takahito, Ono

AU - Esashi, Masavoshi

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