Abstract
The effect of surface modification on Q factors of ultrathin single-crystal silicon cantilevers with different thicknesses and different orientations was studied. Exposure to atomic hydrogen led to a larger relative increase of the Q factor in thinner structures than in thicker ones.
Original language | English |
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Pages (from-to) | 551-556 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 19 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2001 Mar 1 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering