TY - JOUR
T1 - Investigating surface stress
T2 - Surface loss in ultrathin single-crystal silicon cantilevers
AU - Yang, Jinling
AU - Takahito, Ono
AU - Esashi, Masavoshi
N1 - Funding Information:
Research work leading to this paper was funded by the Office of Advanced Technology, United States Postal Service, as Task Order 104230-87-M-0194, under the Basic Ordering Agreement 104230-84-D-0963 for Electro-Optics and Character Recognition.
PY - 2001/3
Y1 - 2001/3
N2 - The effect of surface modification on Q factors of ultrathin single-crystal silicon cantilevers with different thicknesses and different orientations was studied. Exposure to atomic hydrogen led to a larger relative increase of the Q factor in thinner structures than in thicker ones.
AB - The effect of surface modification on Q factors of ultrathin single-crystal silicon cantilevers with different thicknesses and different orientations was studied. Exposure to atomic hydrogen led to a larger relative increase of the Q factor in thinner structures than in thicker ones.
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U2 - 10.1116/1.1347040
DO - 10.1116/1.1347040
M3 - Article
AN - SCOPUS:0343831939
VL - 19
SP - 551
EP - 556
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 2
ER -