Inverse tunnel magnetoresistance associated with Coulomb staircases in micro-fabricated granular systems

K. Yamane, K. Yakushiji, F. Ernult, M. Matsuura, S. Mitani, K. Takanashi, H. Fujimori

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We have investigated spin-dependent single-electron tunneling (SET) in micro-fabricated magnetic granular systems with current-perpendicular-to-plane geometry. Electron beam lithography technique and Ar ion etching were employed for the micro-fabrication process to form a Co/Al-O/Co31Al 24O45/Co/Pt pillar with the cross section of 0.4 × 0.4 μm2. Inverse tunnel magnetoresistance is observed around the step-up points of Coulomb staircases. The observed results are beyond the orthodox theory of SET for a double junction model without spin-accumulation effects.

Original languageEnglish
Pages (from-to)e1091-e1093
JournalJournal of Magnetism and Magnetic Materials
Volume272-276
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2004 May

Keywords

  • Coulomb blockade
  • Coulomb staircase
  • Electron beam lithography
  • Granular film
  • Inverse tunnel magnetoresistance
  • MRAM
  • Single-electron tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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