TY - JOUR
T1 - Inverse spin valve effect in multilayer graphene device
AU - Goto, H.
AU - Tanaka, S.
AU - Tomori, H.
AU - Ootuka, Y.
AU - Tsukagoshi, K.
AU - Kanda, A.
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - We report the gate-voltage dependence of the spin transport in multilayer graphene (MLG) studied experimentally by the local measurement. The sample consists of a Ni/MLG/Ni junction, where the thickness of the MLG is 9 nm and the spacing of two Ni electrodes is 300 nm. At zero gate voltage, we observed the normal spin valve effect, in which the resistance for the antiparallel alignment of magnetization in ferromagnetic electrodes is larger than that for the parallel alignment. By applying a large gate voltage, on the other hand, the spin valve effect is reversed: the resistance for the antiparallel alignment becomes smaller than that for the parallel alignment. The result is qualitatively interpreted as a quantum interference effect, indicating that the mean free path and the spin relaxation length of the MLG are longer than the electrode spacing (300 nm).
AB - We report the gate-voltage dependence of the spin transport in multilayer graphene (MLG) studied experimentally by the local measurement. The sample consists of a Ni/MLG/Ni junction, where the thickness of the MLG is 9 nm and the spacing of two Ni electrodes is 300 nm. At zero gate voltage, we observed the normal spin valve effect, in which the resistance for the antiparallel alignment of magnetization in ferromagnetic electrodes is larger than that for the parallel alignment. By applying a large gate voltage, on the other hand, the spin valve effect is reversed: the resistance for the antiparallel alignment becomes smaller than that for the parallel alignment. The result is qualitatively interpreted as a quantum interference effect, indicating that the mean free path and the spin relaxation length of the MLG are longer than the electrode spacing (300 nm).
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U2 - 10.1088/1742-6596/232/1/012002
DO - 10.1088/1742-6596/232/1/012002
M3 - Conference article
AN - SCOPUS:77954831894
VL - 232
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012002
T2 - 4th International Symposium on Atomic Technology, ISAT-4
Y2 - 18 November 2009 through 19 November 2009
ER -