Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization

Shogo Hatayama, Yuji Sutou, Satoshi Shindo, Yuta Saito, Yun Heub Song, Daisuke Ando, Junichi Koike

Research output: Contribution to journalArticlepeer-review

59 Citations (Scopus)


Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance of a phase-change material between high-resistance amorphous (reset) and low-resistance crystalline (set) states. Herein, we present an inverse resistance change PCRAM with Cr2Ge2Te6 (CrGT) that shows a high-resistance crystalline reset state and a low-resistance amorphous set state. The inverse resistance change was found to be due to a drastic decrease in the carrier density upon crystallization, which causes a large increase in contact resistivity between CrGT and the electrode. The CrGT memory cell was demonstrated to show fast reversible resistance switching with a much lower operating energy for amorphization than a Ge2Sb2Te5 memory cell. This low operating energy in CrGT should be due to a small programmed amorphous volume, which can be realized by a high-resistance crystalline matrix and a dominant contact resistance. Simultaneously, CrGT can break the trade-off relationship between the crystallization temperature and operating speed.

Original languageEnglish
Pages (from-to)2725-2734
Number of pages10
JournalACS Applied Materials and Interfaces
Issue number3
Publication statusPublished - 2018 Jan 24


  • Cr-Ge-Te
  • amorphous
  • contact resistivity
  • crystallization
  • phase-change random access memory

ASJC Scopus subject areas

  • Materials Science(all)


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