Inverse Raman Scattering Resonant to Excitonic Polaritons in Red-Hgl2 and 2H-PbI2

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Abstract

Inverse Raman scattering resonant to excitonic polariton states in red-HgI2 and 2H-PbI2 single crystals at 1.6 K is observed. The inverse Raman absorption line shape is calculated with a polariton dispersion relation renormalized by the intense pump laser. Deformation potentials for A1g optical phonons are estimated from the Raman cross sections to be about 2 eV for these materials, which are rather small compared to those of T2 transverse optical phonons in tetrahedral semiconductors.

Original languageEnglish
Pages (from-to)2573-2580
Number of pages8
Journaljournal of the physical society of japan
Volume57
Issue number7
DOIs
Publication statusPublished - 1988 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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