Abstract
The specimens of 1.2×1.2×3 mm3 size were cut from a single crystal of intrinsic GaAs grown by the Czochralski method. The surfaces were polished with alumina paste. Uniaxial compression along the 〈1̄23〉 axis was made in a high pressure apparatus. A pressure of maximally 1.2 GPa was applied to specimen through the confining material, indium, for the tests up to 430 K. The stress-strain curves observed at various temperatures and confining pressures are presented. Above 600 K GaAs can be deformed under atmospheric pressure at least to 15% strain.
Original language | English |
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Pages (from-to) | 645-650 |
Number of pages | 6 |
Journal | Scripta Materialia |
Volume | 43 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2000 Sep 15 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys